Properties |
Unit |
RSiC |
NSiC |
SiSiC |
Recrystallized Silicon Carbide |
Nitride Bonded Silicon Carbide |
Reaction Sintering Silicon Carbide |
| Chemical |
SiC |
voi% |
¡Ý99 |
¡Ý75 |
¡Ý80 |
|
|
0 |
|
|
Composition |
Si3N 4 |
voi% |
|
¡Ý23 |
|
|
Si |
voi% |
|
|
20 |
bulk density 20¡æ |
g.cm3 |
2.6-2.72 |
2.7-2.8 |
2.9-3.1 |
apparent porosity |
% |
¡Ü15 |
¡Ü11 |
0.15 |
modulus of rupture at 20¡æ |
Mpa |
90-100 |
170-180 |
250 |
modulus of rupture at 1200¡æ |
Mpa |
100-110 |
180-190 |
280 |
modulus of rupture at 1350¡æ |
Mpa |
100-120 |
190-200 |
300 |
modulus of rupture at 20¡æ |
Mpa |
300 |
580 |
330 |
thermal conductivity at 1200¡æ |
w.m-1.k-1 |
36.6 |
19.6 |
15 |
thermal expansion at 1200¡æ |
ax10-6/¡æ |
4.69 |
4.7 |
4.3 |
thermal shock resistance at 1200¡æ |
|
Good |
Excellent |
Excellent |
max.working temperature |
¡æ |
1620(oxid) |
1500 |
1380 |
