RECRYSTALLIZED AND NITRIDE BONDED AND REATION SINTERING SILICON CARBIDE TECHNICAL DATA

Properties
Unit
RSiC
NSiC
SiSiC
Recrystallized Silicon Carbide
Nitride Bonded Silicon Carbide
Reaction Sintering Silicon Carbide
Chemical
SiC
voi%
¡Ý99
¡Ý75
¡Ý80
 
 
0
 
 
Composition
Si3N 4
voi%
 
¡Ý23
 
 
Si
voi%
 
 
20
bulk density 20¡æ
g.cm3
2.6-2.72
2.7-2.8
2.9-3.1
apparent porosity
%
¡Ü15
¡Ü11
0.15
modulus of rupture at 20¡æ
Mpa
90-100
170-180
250
modulus of rupture at 1200¡æ
Mpa
100-110
180-190
280
modulus of rupture at 1350¡æ
Mpa
100-120
190-200
300
modulus of rupture at 20¡æ
Mpa
300
580
330
thermal conductivity at 1200¡æ
w.m-1.k-1
36.6
19.6
15
thermal expansion at 1200¡æ
ax10-6/¡æ
4.69
4.7
4.3
thermal shock resistance at 1200¡æ
 
Good
Excellent
Excellent
max.working temperature
¡æ
1620(oxid)
1500
1380

Note:Above date is the average value of standard test samples, just for reference.

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